WO2025072193 - TWIST AND TILT VERIFICATION USING DIFFRACTION PATTERNS
National phase entry is expected:
Publication Number
WO/2025/072193
Publication Date
03.04.2025
International Application No.
PCT/US2024/048201
International Filing Date
24.09.2024
Title **
[English]
TWIST AND TILT VERIFICATION USING DIFFRACTION PATTERNS
[French]
VÉRIFICATION DE TORSION ET D'INCLINAISON À L'AIDE DE MOTIFS DE DIFFRACTION
Applicants **
AXCELIS TECHNOLOGIES, INC.
108 Cherry Hill Drive
Beverly, Massachusetts 01915, US
Inventors
GEISSBUHLER, Phillip
118 Arlington Street
Winchester, Massachusetts 01890, US
RAHMAN, FHM Faridur
92 King George Drive
Boxford, Massachusetts 01921, US
BASSOM, Neil
260 Echo Cove Road
Hamilton, Massachusetts 01982, US
Priority Data
63/540,255
25.09.2023
US
Application details
Total Number of Claims/PCT | * |
Number of Independent Claims | * |
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Number of Multi-Dependent Claims | * |
Number of Drawings | * |
Pages for Publication | * |
Number of Pages with Drawings | * |
Pages of Specification | * |
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International Searching Authority |
EPO
* |
Applicant's Legal Status |
Legal Entity
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Entry into National Phase under |
Chapter I
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Translation |
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Recalculate
* The data is based on automatic recognition. Please verify and amend if necessary.
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Quotation for National Phase entry
Country | Stages | Total | |
---|---|---|---|
China | Filing | 1277 | |
EPO | Filing, Examination | 6461 | |
Japan | Filing | 546 | |
South Korea | Filing | 576 | |
USA | Filing, Examination | 2635 |


Total: 11495 USD
Abstract[English]
A light source directs an incident beam at a surface of the workpiece on a stage at an oblique angle. A detector images a diffraction pattern of the incident beam reflected off the workpiece. At least one of a twist angle and a tilt angle of the workpiece on the stage is determined based on the diffraction pattern. The workpiece may be a semiconductor wafer and the stage may be, for example, part of an ion implanter.[French]
Une source de lumière dirige un faisceau incident au niveau d'une surface de la pièce sur un étage selon un angle oblique. Un détecteur image un motif de diffraction du faisceau incident réfléchi par la pièce. Au moins l'un d'un angle de torsion et d'un angle d'inclinaison de la pièce sur l'étage est déterminé sur la base du motif de diffraction. La pièce peut être une tranche semi-conductrice et l'étage peut être, par exemple, une partie d'un implanteur ionique.